Fully-Depleted SOI CMOS Technology for Heterogeneous Micropower, High-Temperature or RF Microsystems

Raskin, Jean-Pierre;Laconte, P.;Akheyar, Amal;Adriaensen, Stéphane;Flandre, Denis;et.al.
(2001) Belgian Journal of Electronics & communications — n° 2, p. 53-68 (2001)

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  • Laconte, P.UCLouvain
    Author
  • Akheyar, AmalUCLouvain
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  • Adriaensen, StéphaneUCLouvain
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  • Nève, A.UCLouvain
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  • Martinez, I.UCLouvain
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  • Dehan, M.UCLouvain
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  • Parvais, BertrandUCLouvain
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  • Vanhoenacker-Janvier, DanielleUCLouvain
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  • Demeûs, L.UCLouvain
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  • Delatte, P.UCLouvain
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  • Dessard, VincentUCLouvain
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  • Author
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Raskin, J.-P., Laconte, P., Akheyar, A., Adriaensen, S., Nève, A., Martinez, I., Dehan, M., Parvais, B., Vanhoenacker-Janvier, D., Demeûs, L., Delatte, P., Dessard, V., & Flandre, D. (2001). Fully-Depleted SOI CMOS Technology for Heterogeneous Micropower, High-Temperature or RF Microsystems. Belgian Journal of Electronics & communications, 2, 53-68. https://hdl.handle.net/2078.5/210939 (Original work published 2001)