Comparison of TiSi2, CoSi2, and NiSi for thin-film silicon-on-insulator applications
(1997) Journal of the Electrochemical Society — Vol. 144, n° 7, p. 2437-2442 (1997)
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- Abstract
- TiSi2, CoSi2, and NiSi self-aligned silicide processes have been studied, compared, and applied to thin-film silicon-on-insulator technology. Compared to TiSi2, CoSi2 and NiSi have the advantages of wider process temperature window, no significant doping retarded reaction, narrow runner degradation, and thin-film degradation. Therefore, they are more suitable for thin-film silicon-on-insulator technology. N-type field effect transistors have been fabricated in a complementary metal oxide-semiconductor compatible thin-film silicon-on-insulator technology with titanium, cobalt, and nickel self-aligned silicide processes for low-voltage, low-power microwave applications. The initial thicknesses of titanium, cobalt, and nickel are 30, 13, and 25 nm, respectively. The gate sheet resistances are 6.2, 4.4, and 2.9 Omega/square, respectively, and the total source/drain series resistances are 700, 290, and 550 Omega mu m, respectively. High-frequency measurement results are also presented.
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Chen, J., Colinge, J.-P., Flandre, D., Gillon, R., Raskin, J.-P., & Vanhoenacker-Janvier, D. (1997). Comparison of TiSi2, CoSi2, and NiSi for thin-film silicon-on-insulator applications. Journal of the Electrochemical Society, 144(7), 2437-2442. https://doi.org/10.1149/1.1837833 (Original work published 1997)