In this paper, we demonstrate how a simple fully-depleted SOI CMOS process can be adapted to provide a wide range of performance compatible with the realization of heterogeneous micropower, high-temperature or RF microsystems which involve the integration of sensing, analog and digital components. High-temperature and low-voltage examples are discussed. MOTS-CLÉS : SOI, CMOS, circuits intégrés, capteurs, micropuissance, haute température, automobile, aérospatial.
Flandre, D., & Raskin, J.-P. (2003). Circuits et capteurs intelligents intégrés en technologie CMOS SOI pour environnements et applications hétérogènes. Nano et Micro Technologies, 3(1-2), 183-200. https://hdl.handle.net/2078.5/210572 (Original work published 2003)