Electrical characterization of true Silicon-On-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity

Kilchytska, Valeriya;Flandre, Denis;Chung, T. M.;Olbrechts, Benoit;Raskin, Jean-Pierre;et.al.
(2007) 3rd Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Cirucits (EUROSOI 07) — Location: Leuven (Belgium) (24.January.2007)

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Abstract
In this paper, "true" Silicon-On-Nothing (SON) MOSFETs fabricated by a new technique, consisting in Si layer transfer over a preetched cavity, are investigated. The process has no potential limitation with regards to the device dimensions as well as to the thicknesses of Si film and so-called "nothing" layers. Comparing to single-gate (SG) fully-depleted (FD) SOI MOSFETs fabricated on the same wafer, improved electrical characteristics of SON MOSFETs are demonstrated. Self-heating effect, which can be considered as the main drawback of SON devices, is experimentally addressed for the first time. Finally, the source-to-drain coupling through the substrate is demonstrated to be practically suppressed in such device architecture. (c) 2007 Elsevier Ltd. All rights reserved.
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Kilchytska, V., Flandre, D., Chung, T. M., Olbrechts, B., Vovk, Ya., & Raskin, J.-P. (2007). Electrical characterization of true Silicon-On-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity. Solid-State Electronics, 51(9), 1238-1244. https://doi.org/10.1016/j.sse.2007.07.021 (Original work published 2007)