SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers
(2005) Microsystem Technologies : micro and nanosystems - information storage and processing systems — Vol. 12, n° 1-2, p. 160-168 (2005)
Files
pdfdocument.pdf
Restricted Access - Adobe PDF
- 617.12 KB
Details
- Authors
- Abstract
- In this paper, a Silicon-On-Insulator (SOI) solid-state gas-sensor with an original design of a polysilicon loop-shaped microheater fabricated on a thin-stacked dielectric membrane is presented. The microheater ensures high thermal uniformity and very low power consumption (25 mW for heating at 400 degrees C). Sensitive films are based on tin and tungsten oxides deposited either by RF sputtering or drop coating methods. The fabricated sensors are tested to a wide variety of contaminant species and promising results are obtained. The use of completely CMOS compatible TMAH-based bulk micro-machining techniques during the fabrication process, allows easy smart gas sensor integration in SOI-CMOS technology. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors.
- Affiliations
Citations
Ivanov, P., Laconte, J., Raskin, J.-P., Stankova, M., Sotter, E., Llobet, E., Vilanova, X., Flandre, D., & Correig, X. (2005). SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers. Microsystem Technologies : micro and nanosystems - information storage and processing systems, 12(1-2), 160-168. https://doi.org/10.1007/s00542-005-0003-0 (Original work published 2005)