0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

Vanmackelberg, M;Raynaud, C.;Faynot, O.;Pelloie, JL;Raskin, Jean-Pierre;et.al.
(2002) 1st European Workshop on Ultimate Integration of Silicon (ULIS 2000) — Location: Grenoble (France)

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  • Vanmackelberg, M
    Author
  • Raynaud, C.
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  • Faynot, O.
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  • Pelloie, JL
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  • Flandre, DenisUCLouvain
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  • Vanhoenacker-Janvier, DanielleUCLouvain
    Author
  • Raskin, Jean-PierreUCLouvain
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Abstract
The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 mum Fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 mum partially depleted (PD) devices. These FD devices present a state of the art NFmin, of 0.8 dB and high G(ass) of 13 dB at 6 GHz, at V-ds = 0.75 V, P-dc < 3 mW at 80 mum total gate width. A extrapolated maximum oscillation frequency of about 70 GHz has been obtained at V-ds, = 1 V and J(ds), = 100 mA/mm. (C) 2002 Elsevier Science Ltd. All rights reserved.
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Vanmackelberg, M., Raynaud, C., Faynot, O., Pelloie, J., Tabone, C., Grouillet, A., Martin, F., Dambrine, G., Picheta, L., Mackowiak, E., Llinares, P., Sevenhans, J., Compagne, E., Fletcher, G., Flandre, D., Dessard, V., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2002). 0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters. Solid-State Electronics, 46(3), 379-386. https://hdl.handle.net/2078.5/210329 (Original work published 2002)