Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation
(2012) Applied Physics Letters — Vol. 101, p. 232104-1 - 232104-3 (2012)
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- Abstract
- The in situ examination of barrier capacitance charging, of generation and drift currents, and of carrier lifetime in Si structures during 25 MeV neutrons irradiation has been implemented to correlate radiation induced changes in carrier recombination, thermal release, and drift characteristics and to clarify their impact on detector performance. It has been shown that microwave probed photo-conductivity technique implemented in contact-less and distant manner can be a powerful tool for examination in wide dynamic range of carrier lifetime modified by radiation defects and for rather precise prediction of detector performance.
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Citations
Gaubas, E., Ceponis, T., Jasiunas, A., Uleckas, A., Vaitkus, J., Cortina Gil, E., & Militaru, O. (2012). Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation. Applied Physics Letters, 101, 232104-1 - 232104-3. https://doi.org/10.1063/1.4769370 (Original work published 2012)