A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2 mu m SOI technology

Soung Yee, Lawrence;Alvarez Rengifo, Paula Liliana;Martin, E.;Cortina Gil, Eduardo;Ferrer, C.
(2012) Journal of Instrumentation — Vol. 7, p. C12028 (2012)

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Authors
  • Soung Yee, LawrenceUCLouvain
    Author
  • Alvarez Rengifo, Paula LilianaUCLouvain
    Author
  • Martin, E.
    Author
  • Cortina Gil, Eduardoorcid-logoUCLouvain
    Author
  • Ferrer, C.
    Author
Abstract
A monolithic active pixel sensor for charged particle tracking has been developed within the frame of a research and development project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology). TRAPPISTe aims to study the feasibility of developing a monolithic pixel sensor with SOI technology. TRAPPISTe-2 is the second prototype in this series and was fabricated with an OKI 0.20μm fully depleted (FD-SOI) CMOS process. This device contains test transistors and amplifiers, as well as two pixel matrices with integrated 3-transistor and amplifier readout electronics. The results presented are based on the first electrical measurements performed on the test structures and laser measurements on the pixel matrices.
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Soung Yee, L., Alvarez Rengifo, P. L., Martin, E., Cortina Gil, E., & Ferrer, C. (2012). A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2 mu m SOI technology. Journal of Instrumentation, 7, C12028. https://doi.org/10.1088/1748-0221/7/12/C12028 (Original work published 2012)