High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires
(2012) IEEE Journal of Microelectromechanical Systems — Vol. 21, n° 4, p. 822-829 (2012)
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- Abstract
- An on-chip internal stress-based testing device has been developed in order to deform silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The fracture strain and survival probability distribution have been generated for 50-nm-thick and 50- or 500-nm-wide specimens with lengths varying between 2.5 and 10 μm. Fracture strains reaching up to 5% are attained in the smallest specimens, whereas 90% of the specimens survive 2.5% deformation. This testing platform opens an avenue to investigate and use electromechanical couplings appearing under large mechanical stress or large deformation.
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Citations
Passi, V., Bhaskar, U. K., Pardoen, T., Sodervall, U., Nilsson, B., Petersson, G., Hagberg, M., & Raskin, J.-P. (2012). High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires. IEEE Journal of Microelectromechanical Systems, 21(4), 822-829. https://doi.org/10.1109/JMEMS.2012.2190711 (Original work published 2012)