Self-formation of sub-10 nm nanogaps based on silicidation

Tang, Xiaohui;Francis, Laurent;Dutu, Constantin Augustin;Reckinger, Nicolas;Raskin, Jean-Pierre
(2014) Nanotechnology — Vol. 25, n° 115201, p. 115201-115201 (2014)

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Abstract
We have developed a simple and reliable method for the fabrication of sub-10 nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and silicon atoms during the silicidation process. The nanogap width is determined by the metal layer thickness. Our proposed method can produce symmetric and asymmetric electrode nanogaps, as well as multiple nanogaps within one unique process step, for potential application to biological/chemical sensors and nanoelectronics, such as resistive switches, storage devices, and vacuum channel transistors. This method provides high throughput and it is suitable for large-scale production.
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Tang, X., Francis, L., Dutu, C. A., Reckinger, N., & Raskin, J.-P. (2014). Self-formation of sub-10 nm nanogaps based on silicidation. Nanotechnology, 25(115201), 115201-115201. https://doi.org/10.1088/0957-4484/25/11/115201 (Original work published 2014)