Tuning the surface conditioning of trapezoidally shaped silicon nanowires by (3-aminopropyl)triethoxysilane.

Dutu, Constantin Augustin;Vlad, Alexandru;Reckinger, Nicolas;Flandre, Denis;Melinte, Sorin;et.al.
(2014) Applied Physics Letters — Vol. 104, n° 2, p. 023502 (4) (2014)

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Abstract
We report on the electrical performance of silane-treated silicon nanowires configured as n + – p – n + field effect transistors. The functionalization of the silicon oxide shell with (3-aminopropyl)triethoxysilane controls the formation of the conduction channel in the trapezoidal cross-section nanowires. By carefully adjusting the surface conditioning protocol, robust electrical characteristics were achieved in terms of device-to-device reproducibility for the studied silicon nanowire transistors: the standard deviation displays a fourfold decrease for the threshold voltage together with a sevenfold improvement for the subthreshold slope.
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Dutu, C. A., Vlad, A., Reckinger, N., Flandre, D., Raskin, J.-P., & Melinte, S. (2014). Tuning the surface conditioning of trapezoidally shaped silicon nanowires by (3-aminopropyl)triethoxysilane. Applied Physics Letters, 104(2), 023502 (4). https://doi.org/10.1063/1.4861598 (Original work published 2014)