Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate
(2016) Journal of Applied Physics — Vol. 119, n° 13, p. 135304 (2016)
Files
Nhan_JAP16_texture_transition-2.pdf
Restricted Access - Adobe PDF
- 1.91 MB
Details
- Authors
- Abstract
- Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (Tdep) ranges from room temperature up to 170 C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For Tdep above 80 C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for Tdep above 80 C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films. VC 2016 AIP Publishing LLC.
- Affiliations
Citations
Bui, T. N., Raskin, J.-P., & Hackens, B. (2016). Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate. Journal of Applied Physics, 119(13), 135304. https://doi.org/10.1063/1.4945036 (Original work published 2016)