Using Statistical Student's t-Test to Qualify the Electrical Performance of the Diamond MOSFETs

Vono Peruzzi, Vinicius;da Silva, Gabriel Augusto;Renaux, Christian;Flandre, Denis;Pinillos Gimenez, Salvador
(2018) 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018) — Location: Bento Gonçalves, Rio Grande do Sul (Brazil ) (27.August.2018)

Files

No attached file found for this publication.

Details

Authors
  • Vono Peruzzi, ViniciusDepartment of Electrical Engineering, Centro Universitario da FEI, Sao Bernardo do Campo, Brazil
    Author
  • da Silva, Gabriel AugustoDepartment of Electrical Engineering, Centro Universitario da FEI, Sao Bernardo do Campo, Brazil
    Author
  • Renaux, ChristianUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
  • Pinillos Gimenez, SalvadorDepartment of Electrical Engineering, Centro Universitario da FEI, Sao Bernardo do Campo, Brazil
    Author
Abstract
This study describes the use of the Student’s t-Test to qualify statistically the impact of using the Diamond (hexagonal) layout style in the electrical performance of Silicon-On-Insulator (SOI) MOSFETs. A sample of 360 SOI Metal-Oxide- Semiconductor Field Effect Transistors, n-type (nMOSFETs) were used to perform this experimental work. Regarding the SOI MOSFETs saturation drain current (IDSsat), the results of this study indicate that the Diamond SOI nMOSFETs for all considered angles present higher IDSsat mean values in comparison to those measured from the standard rectangular SOI MOSFET counterparts, considering that they present the same gate areas, channel width and bias conditions (with a bias condition of 1V between the drain and source and a bias condition of 0.4V between the gate and source). For all the other α angle, that is, 36.9°, 53.1°, 90.0°, 126.9° and 143.1°, the DSnM IDSsat/(W/L) mean value is higher than the CSnM IDSsat/(W/L) mean value in an order of 51.3%, 37.6%, 40.9%, 19.0% and 10.6%, respectively. Therefore, this statistical approach can be used as a power statistical tool to validate electrical parameters and figures of merit of devices and integrated circuits regarding the nanoelectronics area.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Vono Peruzzi, V., da Silva, G. A., Renaux, C., Flandre, D., & Pinillos Gimenez, S. (2018). Using Statistical Student’s t-Test to Qualify the Electrical Performance of the Diamond MOSFETs. Proceedings of SBMicro 2018. Published. 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018), Bento Gonçalves, Rio Grande do Sul (Brazil ). https://hdl.handle.net/2078.5/173585 (Original work published 2018)