Numerical Simulation and Analysis of Transistor Channel Length and Doping Mismatching in GC SOI nMOSFETs Analog Figures of Merit

Restani Alves, Camila;de Souza, Michellu;Flandre, Denis
(2018) 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018) — Location: Bento Gonçalves, Rio Grande do Sul (Brazil ) (27.August.2018)

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NumericalSimulationandAnalysisofTransistorChannelLengthandDopingMismatchinginGCSOInMOSFETsAnalogFiguresofMerit.pdf
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  • Restani Alves, CamilaDepartment of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
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  • de Souza, MichelluDepartment of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
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  • Flandre, DenisUCLouvain
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Abstract
This paper presents a two-dimensional numerical simulation study of mismatching on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. The study aims at identifying the mismatching sources that affect the analog performance of GC SOI transistors. The simulations were performed imposing length and doping concentration variations and analyzing its impact on important electrical parameters such as threshold voltage and subthreshold slope, as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.
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Restani Alves, C., de Souza, M., & Flandre, D. (2018). Numerical Simulation and Analysis of Transistor Channel Length and Doping Mismatching in GC SOI nMOSFETs Analog Figures of Merit. Proceedings of SBMicro 2018. Published. 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018), Bento Gonçalves, Rio Grande do Sul (Brazil ). https://hdl.handle.net/2078.5/173584 (Original work published 2018)