Influence of carriers injection conditions on current-voltage characteristic of InGaAs/InAlAs-based three-terminal ballistic junctionFahri, G.;Hackens, Benoît;Faniel, Sébastien;Gustin, Cédric;Cappy, A.;et.al.(2004) APS March Meeting — Location: Montreal, Canada (22.March.2004)
FilesNo attached file found for this publication.DetailsAuthorsFahri, G.UCLouvainAuthorHackens, BenoîtUCLouvainAuthorFaniel, SébastienUCLouvainAuthorGustin, CédricAuthorBayot, VincentUCLouvainAuthorCappy, A.AuthorShow more AffiliationsUCLouvainSST/IMCN/NAPS - Nanoscopic PhysicsShow moreCitations APA Chicago FWB Fahri, G., Hackens, B., Faniel, S., Gustin, C., Bayot, V., Wallart, X., Bollaert, S., & Cappy, A. (2004). Influence of carriers injection conditions on current-voltage characteristic of InGaAs/InAlAs-based three-terminal ballistic junction. APS March Meeting, Montreal, Canada. https://hdl.handle.net/2078.5/171795