Near-IR response of highly-strained Si photodetector linking first principles and TCAD
(2023) ESSDERC-ESSCIRC 2023 — Location: Lisbon (11.September.2023)
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- Authors
Roisin, Nicolas 
- Abstract
- TCAD finite element methods coupled with first principles simulation are undertaken to predict the enhancement of the opto-electronic performance in highly-strained semiconductors. The increase of the absorption coefficient in strained silicon is first computed using first-principles theory and leads to significant improvement in the infrared spectrum. The absorption limit is moved from 1.1 μm wavelength in relaxed silicon to above 1.35 μm when 2% tensile strain is applied along the [110] crystal direction. A strained silicon photodetector with three thicknesses (1 μm, 10 μm and 50 μm) is then simulated using TCAD software to retrieve the strain-enhanced quantum efficiency. The results are compared to a theoretical model and show significant improvement. An increase from 0.03% to 1.92% (resp. 0.11% to 7.60%) is observed for 10 μm (resp. 50 μm) thickness at a photon wavelength of 1.2 μm. The combined approach of using TCAD tool to predict the performances of a novel photodetector for which the material properties have been computed using first principles brings new possibilities for the investigation of advanced devices.
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Citations
Roisin, N., Raskin, J.-P., & Flandre, D. (2023). Near-IR response of highly-strained Si photodetector linking first principles and TCAD. ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 1(1), 1-9. https://doi.org/10.1109/ESSDERC59256.2023.10268568 (Original work published 2023)