Hexagonal Boron Nitride Memristor based on a nanogap self-formed by silicidation

Yan, Yiyi;Reckinger, Nicolas;Kilchytska, Valeriya;Flandre, Denis;Raskin, Jean-Pierre;et.al.
(2022) Mini Colloquia (MQ) on “Memristive Devices”, The 6th Symposium on Schottky Barrier MOS Devices (SSBMOS) — Location: Giessen, Germany (7.September.2022)

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Yan, Y., Reckinger, N., Kilchytska, V., Flandre, D., Tang, X., Malik, M. W., Hackens, B., & Raskin, J.-P. (2022). Hexagonal Boron Nitride Memristor based on a nanogap self-formed by silicidation. Mini Colloquia (MQ) on “Memristive Devices”, The 6th Symposium on Schottky Barrier MOS Devices (SSBMOS), Giessen, Germany. https://hdl.handle.net/2078.5/164352