Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits

Flandre, Denis
(1998) Materials Science and Engineering B: Solid-State Materials for Advanced Technology — Vol. 29, n° 1-3, p. 7-12 (2000)

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Abstract
The hightemperature characteristics of devices and circuits realized in complementary metaloxidesemiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 °C.
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Flandre, D. (1998). Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 29(1-3), 7-12. https://doi.org/10.1016/0921-5107(94)04018-Y (Original work published 2000)