Study of Matching Properties of Graded-Channel SOI MOSFETsde Souza, Michelly;Flandre, Denis;Pavanello, Marcelo(2008) Journal of Integrated Circuits and Systems — Vol. 3, n° 2, p. 69-75 (2008)
FilesNo attached file found for this publication.DetailsAuthorsde Souza, MichellyCentro Universitário da FEI, São Bernardo do Campo, SP, BrazilAuthorFlandre, DenisUCLouvainAuthorPavanello, MarceloCentro Universitário da FEI, São Bernardo do Campo, SP, BrazilAuthorAffiliationsCentro Universitário da FEI, São Bernardo do Campo, SP, BrazilElectrical Engineering DepartmentUCLouvainFSA/ELEC - Département d'électricitéShow moreCitations APA Chicago FWB de Souza, M., Flandre, D., & Pavanello, M. (2008). Study of Matching Properties of Graded-Channel SOI MOSFETs. Journal of Integrated Circuits and Systems, 3(2), 69-75. https://hdl.handle.net/2078.5/151907 (Original work published 2008)