Measurement and Simulation of Floating Substrate Effects On the Intrinsic Gate Capacitance Characteristics of Soi N-mosfets
(1992) Electronics Letters — Vol. 28, n° 10, p. 967-969 (1992)
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- Abstract
- The theoretical foundation of unique floating substrate effects, which have been observed experimentally, on the intrinsic gate capacitance characteristics in saturation of SOI n-MOSFETs, is clearly established using original two-dimensional numerical device simulations.
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Flandre, D. (1992). Measurement and Simulation of Floating Substrate Effects On the Intrinsic Gate Capacitance Characteristics of Soi N-mosfets. Electronics Letters, 28(10), 967-969. https://doi.org/10.1049/el:19920614 (Original work published 1992)