Evidence of Different Conduction Mechanisms in Accumulation-mode P-channel Soi Mosfets At Room and Liquid-helium Temperatures
(1993) IEEE Transactions on Electron Devices — Vol. 40, n° 4, p. 727-732 (1993)
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- Abstract
- The threshold voltage for the three different conduction components of an accumulation-mode PMOS SOI are experimentally extracted at room and liquid-helium temperatures. A deep-depletion transient effect is observed to play an important role when one of the interfaces is in inversion, even at room temperature. An intuitive physical interpretation is given for the suppression of some current components at liquid-helium temperatures. In addition, a simple model for calculating the silicon-film thickness and the doping level is presented.
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Rotondaro, ALP., Flandre, D., Magnusson, UK., Claeys, C., Terao, A., & Colinge, J.-P. (1993). Evidence of Different Conduction Mechanisms in Accumulation-mode P-channel Soi Mosfets At Room and Liquid-helium Temperatures. IEEE Transactions on Electron Devices, 40(4), 727-732. https://doi.org/10.1109/16.202784 (Original work published 1993)