Low temperature operation of graded-channel SOI nMOSFETs for analog applications

Pavanello, MA;Der Agopian, PG;Martino, JA;Flandre, Denis
(2002) Journal de Physique IV — Vol. 12, n° 3, p. 23-26 (2002)

Files

No attached file found for this publication.

Details

Authors
  • Pavanello, MA
    Author
  • Der Agopian, PG
    Author
  • Martino, JA
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
We present in this work is an analysis of die low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fully-depleted SOI nMOSFET.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Pavanello, M., Der Agopian, P., Martino, J., & Flandre, D. (2002). Low temperature operation of graded-channel SOI nMOSFETs for analog applications. Journal de Physique IV, 12(3), 23-26. https://hdl.handle.net/2078.5/141968 (Original work published 2002)