Carrier lifetime extraction in fully depleted dual-gate SOI devices
(1999) IEEE Electron Device Letters — Vol. 20, n° 5, p. 209-211 (1999)
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- Abstract
- A new method for;extracting the carrier recombination lifetime in dual-gate silicon-on-insulator (SOI) structures is proposed. The experiment, model, and numerical simulations indicate that an excess forward current is obtained when carrier recombination occurs in the whole film volume.
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Citations
Ernst, T., Flandre, D., Vandooren, A., Cristoloveanu, S., & Colinge, JP. (1999). Carrier lifetime extraction in fully depleted dual-gate SOI devices. IEEE Electron Device Letters, 20(5), 209-211. https://doi.org/10.1109/55.761017 (Original work published 1999)