High-temperature sigma-delta modulator in thin-film fully-depleted SOI technology

Viviani, A.;Jespers, Paul;Flandre, Denis
(1999) Electronics Letters — Vol. 35, n° 9, p. 749-751 (1999)

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  • Viviani, A.UCLouvain
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  • Jespers, PaulUCLouvain
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  • Flandre, DenisUCLouvain
    Author
Abstract
A second-order sigma-delta (Sigma Delta) modulator for high-temperature (HT) applications is presented. The modulator exploits the advantages of the fully-depleted (FD) SOI CMOS technology as well as a dedicated design procedure in order to extend the temperature range of classical architectures up to 300 degrees C, thereby avoiding compensation circuits which add to the power dissipation.
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Viviani, A., Jespers, P., & Flandre, D. (1999). High-temperature sigma-delta modulator in thin-film fully-depleted SOI technology. Electronics Letters, 35(9), 749-751. https://doi.org/10.1049/el:19990513 (Original work published 1999)