Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
(2006) 16th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-16) — Location: Albuquerque(Nm) (10.July.2005)
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- Abstract
- We investigate nonlinear effects at low temperature in the I-V characteristics of four-terminal nanojunctions fabricated from InGaAs/ InAlAs heterostructures. The rectified voltage can be tuned by applying biases on side gates, as well as by changing cooldown conditions, I i.e., by controlling the conductances of the junctions' channels. In addition, we observe reversals in the slope of the I-V curves as the probe current grows. These reversals coincide with abrupt changes in the channels' conductances. We discuss possible interpretations of these observations, and provide a comparison with previous experimental results. (c) 2006 Elsevier B.V. All rights reserved.
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Hackens, B., Gence, L., Faniel, S., Gustin, C., Wallart, X., Bollaert, S., Cappy, A., & Bayot, V. (2006). Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions. Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), 515-518. https://doi.org/10.1016/j.physe.2006.03.024 (Original work published 2006)