A New Analytical Model for the 2-terminal Mos Capacitor On Soi Substrate

Flandre, Denis;Vandewiele, F.
(1988) IEEE Electron Device Letters — Vol. 9, n° 6, p. 296-299 (1988)

Files

No attached file found for this publication.

Details

Authors
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Flandre, D., & Vandewiele, F. (1988). A New Analytical Model for the 2-terminal Mos Capacitor On Soi Substrate. IEEE Electron Device Letters, 9(6), 296-299. https://doi.org/10.1109/55.722 (Original work published 1988)