Theoretical-analysis of the 2-terminal Mos Capacitor On Soi Substrate
(1988) Journal de Physique — Vol. 49, n° C-4, p. 67-70 (1988)
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- Abstract
- The present paper deals with the analytical and numerical study of MOS capacitors on SOI substrates. The major concern is the theoretical treatment of such devices with floating substrate. Special care has been taken to keep the mathematical modeling consistent with physical considerations. The importance and the role of the underlying silicon substrate have been highlighted. The different operating conditions of the capacitance-voltage characteristic have been interpreted in terms of device intrinsic physical mechanisms.
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Citations
Paelinck, P., Flandre, D., Terao, A., & Vandewiele, F. (1988). Theoretical-analysis of the 2-terminal Mos Capacitor On Soi Substrate. Journal de Physique, 49(C-4), 67-70. https://doi.org/10.1051/jphyscol:1988413 (Original work published 1988)