Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications
(2001) IEEE Transactions on Industrial Electronics — Vol. 48, n° 2, p. 272-280 (2001)
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- Abstract
- The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-insulator (SOI) substrates and operated at elevated temperatures are presented and compared with results obtained using other materials (bulk Si, GaAs, SiC). It is demonstrated that fully depleted CMOS on SOI is the most suitable process for the realization of complex electronic circuits to be operated in high-temperature environments, up to more than 300 degreesC.
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Citations
Demeus, L., Flandre, D., Dessard, V., Viviani, A., & Andriaensen, S. (2001). Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications. IEEE Transactions on Industrial Electronics, 48(2), 272-280. https://doi.org/10.1109/41.915405 (Original work published 2001)