Interpretation of Quasi-static C-v Characteristics of Mosos Capacitors On Soi Substrates

Flandre, Denis;Loo, T.;Verlinden, P.;Vandewiele, F.
(1991) Electronics Letters — Vol. 27, n° 1, p. 43-44 (1991)

Files

No attached file found for this publication.

Details

Authors
  • Flandre, DenisUCLouvain
    Author
  • Loo, T.
    Author
  • Verlinden, P.
    Author
  • Vandewiele, F.
    Author
Abstract
The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results of quasi-static C-V measurements are presented for the first time and compared to existing theoretical models. The suitability of the technique to assess rapidly the quality of an SOI MOS fabrication process is finally discussed.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Flandre, D., Loo, T., Verlinden, P., & Vandewiele, F. (1991). Interpretation of Quasi-static C-v Characteristics of Mosos Capacitors On Soi Substrates. Electronics Letters, 27(1), 43-44. https://doi.org/10.1049/el:19910028 (Original work published 1991)