25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process

Adriaensen, Stéphane;Flandre, Denis;Dessard, Vincent
(2002) Electronics Letters — Vol. 38, n° 19, p. 1103-1104 (2002)

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  • Adriaensen, StéphaneUCLouvain
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  • Flandre, DenisUCLouvain
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  • Dessard, VincentUCLouvain
    Author
Abstract
A new patented voltage reference is presented. The very simple architecture, which can be implemented in standard silicon-on-insulator CMOS processes, gives very low power consumption (from 1 pA at 25degreesC up to 50 nA at 300degreesC) and good voltage stability (about 200 ppm/degreesC) over the whole temperature range.
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Adriaensen, S., Flandre, D., & Dessard, V. (2002). 25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process. Electronics Letters, 38(19), 1103-1104. https://doi.org/10.1049/el:20020768 (Original work published 2002)