Advantages of the graded-channel SOIFD MOSFET for application as a quasi-linear resistor
(2005) IEEE Transactions on Electron Devices — Vol. 52, n° 5, p. 967-972 (2005)
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- Abstract
- In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications as on-resistance and nonlinear harmonic distortion, is supported by both measurements and simulations of conventional and graded-channel (GC) fully depleted silicon-on-insultor (SOI) MOSFETs. The quasi-linear current-voltage characteristics of GC transistors show a decrease of the on-resistance as the length of the low doped region in the channel is increased, as well as an improvement in the third-order harmonic distortion (HD3), when compared with conventional transistors. A method for full comparison between conventional and GC SOI MOSFETs is presented, considering HD3 evolution with on-resistance tuning under low voltage of operation. Results demonstrate the significant advantages provided by the asymmetrical long channel transistors.
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Cerdeira, A., Flandre, D., Aleman, M., Pavanello, M. A., Martino, J., & Vancaillie, L. (2005). Advantages of the graded-channel SOIFD MOSFET for application as a quasi-linear resistor. IEEE Transactions on Electron Devices, 52(5), 967-972. https://doi.org/10.1109/TED.2005.846327 (Original work published 2005)