A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures
(2005) Journal of Applied Physics — Vol. 97, n° 9, p. 9 pages (2005)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- In this paper the reverse gated-diode technique is examined for determining the carrier generation lifetime and surface generation velocities in thin-film silicon-on-insulator (SOI) devices. Using the modeling of the gate-controlled volume and surface generation components, SOI-specific aspects of the technique are highlighted. A reliable approach for extracting generation parameters in thin-film SOI devices from reverse gated-diode measurements is proposed and validated for high temperatures. The technique is demonstrated on the devices fabricated on two different SOI materials (zone-melt recrystallized and Unibond(R)), as examples of volume- and surface-dominated generation current behaviors. Finally, the technique is applied to characterize Unibond(R) SOI devices operating in the temperature range 100-300 degrees C to demonstrate the model and technique applicability at high temperatures. (C) 2005 American Institute of Physics.
- Affiliations
Citations
Rudenko, T., Flandre, D., Kilchytska, V., & Dessard, V. (2005). A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures. Journal of Applied Physics, 97(9), 9 pages. https://doi.org/10.1063/1.1893211 (Original work published 2005)