Structural and Opto‑electronic characterization of CuO thin films prepared by DC reactive magnetron sputtering
(2020) Journal of Materials Science: Materials in Electronics — Vol. 31, p. 4563-4573 (2020)
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- P-type CuO thin films have been deposited and optimized for large-area photodetection applications by tuning the sputtering pressure and oxygen to argon gas ratio, considering both high-temperature sputtering and post-annealing. The obtained layers show tunable bandgaps from 1.30 to 2.04 eV and Urbach energies lower than 8 meV. Reliable Hall measurements reveal the inverse double logarithmic relationship between Hall mobility and carrier concentration. By setting the optimal sputtering pressure of 10 mTorr (O2/Ar = 8/22 sccm) at the edge of oxidization and transition regimes, CuO with 1.64 eV bandgap reaches stable hole mobility of 34.2 cm2V−1 s−1 and hole concentration of 3.92 × 1014 cm−3 after 250 °C post-annealing. Considering heating at 150 °C during the deposition, CuO with 1.63 eV bandgap also reaches stable record hole mobility of 113.7 cm2V− 1 s−1 and hole concentration of 1.39 × 1014 cm−3.
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Zeng, X., Zhukova, M., Faniel, S., Proost, J., & Flandre, D. (2020). Structural and Opto‑electronic characterization of CuO thin films prepared by DC reactive magnetron sputtering. Journal of Materials Science: Materials in Electronics, 31, 4563-4573. https://doi.org/10.1007/s10854-020-03007-4 (Original work published 2020)