Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime

Moreau, Nicolas;Brun-Barrière, Boris;Somanchi, S.;Watanabe, K.;Hackens, Benoît;et.al.
(2021) Physical Review B — Vol. 104, n° 20, p. L201406-1 (2021)

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Authors
  • Moreau, Nicolasorcid-logoUCLouvain
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  • Brun-Barrière, Borisorcid-logoUCLouvain
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  • Somanchi, S.JARA-FIT and 2nd Institute of Physics - RWTH Aachen 52074, Germany
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  • Watanabe, K.orcid-logoResearch Center for Functional Materials, National Institute for Materials Science, Namiki 305-0044, Japan
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  • Hackens, Benoîtorcid-logoUCLouvain
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Abstract
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry.
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Moreau, N., Brun-Barrière, B., Somanchi, S., Watanabe, K., Taniguchi, T., Stampfer, C., & Hackens, B. (2021). Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime. Physical Review B, 104(20), L201406-1. https://doi.org/10.1103/physrevb.104.l201406 (Original work published 2021)