Memristive and Tunneling Effects in 3D Interconnected Silver Nanowires

Chopin, Chloé;de Wergifosse, Simon;Marchal, Nicolas;Van Velthem, Pascal;Abreu Araujo, Flavio;et.al.
(2023) ACS Omega — Vol. 8, n° 7, p. 6663-6668 (2023)

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Abstract
A network of silver nanowires (Ag-NWs) is grown by electrodeposition in a nanoporous membrane with interconnected nanopores. This bottom-up approach fabrication method gives a conducting network with a 3D architecture and a high density of Ag-NWs. The network is then functionalized during the etching process, which leads to a high initial resistance as well as memristive behavior. The latter is expected to arise from the creation and the destruction of conducting silver filaments in the functionalized Ag-NW network. Moreover, after several cycles of measurement, the resistance of the network switches from a high-resistance regime in the GΩ range with tunnel conduction to a low-resistance regime presenting negative differential resistance in the kΩ range.
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Chopin, C., de Wergifosse, S., Marchal, N., Van Velthem, P., Piraux, L., & Abreu Araujo, F. (2023). Memristive and Tunneling Effects in 3D Interconnected Silver Nanowires. ACS Omega, 8(7), 6663-6668. https://doi.org/10.1021/acsomega.2c07171 (Original work published 2023)