V-band low phase-noise oscillator based on a cavity resonator integrated in the silicon substrate of the MCM-D platform
(2012) Microwave & Optical Technology Letters — Vol. 54, n° 8, p. 1788-1792 (2012)
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- Abstract
- In this article, we present a V-band low-phase-noise oscillator stabilized by a silicon integrated cavity resonator (SiCR). The SiCR is realized in a multi chip module-deposited thin-film technology platform. The high resistivity silicon substrate is thinned to 100 μm and through silicon vias are available. The resonator is formed by a double row of through silicon vias defining a TM010 cylindrical cavity resonator. The area on top of the resonator is reused for flip-chip mounting the active device, a MMIC chip realized in BiCMOS technology, implementing SiGe heterojunction bipolar transistors. A lower phase noise is demonstrated for the oscillator using SiCR in comparison with an idle oscillator using the same active device but a shorted CPW line as resonator. In the best case, the phase-noise of the oscillator with SiCR is reduced to −102 dBc/Hz at 1-MHz carrier offset, fosc = 54 GHz, from −89 dBc/Hz at 1 MHz carrier offset, fosc = 47.3 GHz, corresponding to the idle oscillator, using the CPW resonator.
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Citations
Dancila, D., Rottenberg, X., John, A., Tilmans, H., De Raedt, W., & Huynen, I. (2012). V-band low phase-noise oscillator based on a cavity resonator integrated in the silicon substrate of the MCM-D platform. Microwave & Optical Technology Letters, 54(8), 1788-1792. https://doi.org/10.1002/mop.26946 (Original work published 2012)