The impact of externally applied mechanical stress on analog and RF performances of SOI MOSFETs

Emam, Mostafa;Houri, Samer;Vanhoenacker-Janvier, Danielle;Raskin, Jean-Pierre
(2009) Journal of Telecommunications and Information Technology — n° 4, p. 18-24 (2009)

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Abstract
This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezore- sistance coefficient is shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.
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Emam, M., Houri, S., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2009). The impact of externally applied mechanical stress on analog and RF performances of SOI MOSFETs. Journal of Telecommunications and Information Technology, 4, 18-24. https://hdl.handle.net/2078.5/211431 (Original work published 2009)