Density Gradient calibration for 2D quantum confinement: Tri-Gate SOI transistor application

et al.;Nguyen, Viet-Hung;et al.
(2013) 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) — Location: Glasgow, United Kingdom (3.September.2013)

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et al., Nguyen, V.-H., & et al. (2013). Density Gradient calibration for 2D quantum confinement: Tri-Gate SOI transistor application. SISPAD2013, 184-187. https://doi.org/10.1109/sispad.2013.6650605 (Original work published 2013)