Fabrication of self aligned double gate MOS transistor
(2003) Union Radio-Scientifique Internationale (U.R.S.I.) — Location: Brussels, Belgium (18.December.2003)
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Charavel, R., & Raskin, J.-P. (2003). Fabrication of self aligned double gate MOS transistor. Proceedings of the Union Radio-Scientifique Internationale (U.R.S.I.), pp. 37-38. https://hdl.handle.net/2078.5/229070