SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers
(2004) Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2004) — Location: Montreux (Switzerland) (12.May.2004)
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- Abstract
- In this paper, a Silicon-On-Insulator (SOI) solid-state gas-sensor with an original design of a polysilicon loop-shaped microheater fabricated on a thin-stacked dielectric membrane is presented. The microheater ensures high thermal uniformity and very low power consumption (25 mW for heating at 400°C). Sensitive films are based on tin and tungsten oxides deposited either by RF sputtering or drop coating methods. The fabricated sensors are tested to a wide variety of contaminant species and promising results are obtained. The use of completely CMOS compatible TMAH-based bulk micro-machining techniques during the fabrication process, allows easy smart gas sensor integration in SOI-CMOS technology. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors.
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Citations
Ivanov, P. T., Laconte, J., Raskin, J.-P., Stankova, M., Sotter, E., Llobet, E., Vilanova, X., Flandre, D., & Correig, X. (2004). SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers. Proceedings of the Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2004), 160-168. https://hdl.handle.net/2078.5/253154