Analytical expressions for distorsion of SOI MOSFETs using the Volterra series

Parvais, Bertrand;Raskin, Jean-Pierre
(2004) The European Gallium Arsenide and other Compound Semicondutors Application Symposium (GAAS) as part of the European Microwave Week 2004 — Location: Amsterdam, Netherlands (12.October.2004)

Files

No attached file found for this publication.

Details

Authors
Abstract
The harmonic and intermodulation distortions of SOI MOSFETs are studied with the help of the Wiener-Volterra series. Simple relationships are given and validated through Large-Signal Network Analyser measurements. The simplicity of the formulation makes it attractive to circuit designers. Furthermore, it may be used to determine the validity range of low-frequency based distortion characterization techniques. It is shown that the dominant poles of the HD for a 0.25 µm Partially Depleted SOI MOSFET lies at a few GHz, depending on the load impedance and the biasing and that its IMD3 depends on the tone separation.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Parvais, B., & Raskin, J.-P. (2004). Analytical expressions for distorsion of SOI MOSFETs using the Volterra series. Proceedings of the The European Gallium Arsenide and other Compound Semicondutors Application Symposium (GAAS) as part of the European Microwave Week 2004, pp. 223-226. https://hdl.handle.net/2078.5/229266