Design of a 23 GHz Low Noise Amplifier in 130 nm SOI CMOS Technology

Si Moussa, Mehdi;Pavageau, C.;Picheta, L.;Danneville, F.;Vanhoenacker-Janvier, Danielle;et.al.
(2007) Third Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’07 — Location: Leuven, Belgium (24.January.2007)

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  • Si Moussa, MehdiUCLouvain
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  • Pavageau, C.IEMN, Villeneuve d'Ascq, France
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  • Picheta, L.IEMN, Villeneuve d'Ascq, France
    Author
  • Danneville, F.IEMN, Villeneuve d'Ascq, France
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  • Vanhoenacker-Janvier, DanielleUCLouvain
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Si Moussa, M., Pavageau, C., Picheta, L., Danneville, F., Russat, J., Fel, N., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2007). Design of a 23 GHz Low Noise Amplifier in 130 nm SOI CMOS Technology. Proceedings of the Third Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’07, pp. 72-73. https://hdl.handle.net/2078.5/229420