Charge carrier injection and trapping in the buried oxides of SOI structures
(2002) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices — p. 139-158, published
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- The electron injection processes in the silicon-on-insulator (SOI) devices affect strongly the reliability of device operation [1]. Usually the buried oxide (BOX)/silicon film interface shows worse structural and electrical properties than that of the gate oxide/silicon film interface [2]. This leads to enhanced charge trapping and degradation of the BOX during SOI device operation. Therefore, the promising perspectives of SOI devices for some applications (especially for high-voltage and high-temperature devices) are often limited by carrier injection processes in the BOX.
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Nazarov, A., Kilchytska, V., & Barchuk, I. P. (2002). Charge carrier injection and trapping in the buried oxides of SOI structures. In F.Balestra, A.N.Nazarov, V.S.Lysenko (ed.), Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (p. p. 139-158). Kluwer Academic Publishers. https://hdl.handle.net/2078.5/253104