High resolution interferometry (HRI) and electronic speckle pattern interferometry (ESPI) applied to the thermomechanical study of a MOS power transistor

Nassim, K.;Joannes, L.;Cornet, Alain;Dilhaire, S.;Claeys, W.;et.al.
(1998) Proceedings of 4th International Workshop on Thermal Investigations of ICs and Microstructures — Location: Cannes, France (27.September.1998)

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  • Nassim, K.
    Author
  • Joannes, L.
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  • Cornet, AlainUCLouvain
    Author
  • Dilhaire, S.
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  • Claeys, W.
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Abstract
We present an original optical approach for the thermomechanical study of electronic devices. We have applied it to imaging of the deformation undergone by a MOS power transistor due to its operation. This imaging method allows derivation of the three components of the displacement vector of each point of the component surface while heated by the Joule effect under operating conditions. The method has nanometric resolution for the displacement measurement and is based upon analysis of the speckle structure of the device while illuminated by coherent light. A high resolution interferometer is also used to record the transient behaviour of the normal surface displacement of a point on the surface. These optical approaches provide interesting information about strain and stress in electronic power devices.
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Nassim, K., Joannes, L., Cornet, A., Dilhaire, S., Schaub, E., & Claeys, W. (1998). High resolution interferometry (HRI) and electronic speckle pattern interferometry (ESPI) applied to the thermomechanical study of a MOS power transistor. International Workshop on Thermal Investigations of ICs andMicrostructures, p. 227-231. https://hdl.handle.net/2078.5/222860