Transport in Triple-Gate Si Nanowires using a full-3D Real-Space NEGF Simulator

Dehdashti, Nima;Afzalian, Aryan;Lee, Chi-Woo;Yan, Ran;Colinge, Jean-Pierre;et.al.
(2009) 5th EuroSOI Workshop 2009 — Location: Göteborg (Sweden) (19.January.2009)

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Authors
  • Dehdashti, NimaTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
We report the effects of device parameters variations on the electrical characteristics of rectangular Si nanowires. Starting from a basic Triple-Gate Nanowire structure with a gate length of 10 nm, variation of gate length and channel thickness was carried out in connection with the numerical calculation of device characteristics. Our three-dimensional (3D) device simulator is based on solving the quantum transport equations using the Non Equilibrium Green’s Function (NEGF) formalism. In this work the NEGF method is applied in the active area of the device to obtain the charge density and the Poisson’s equation is solved in the entire simulation domain to get the potential profile.
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Dehdashti, N., Afzalian, A., Lee, C.-W., Yan, R., Fagas, G., & Colinge, J.-P. (2009). Transport in Triple-Gate Si Nanowires using a full-3D Real-Space NEGF Simulator. Proceedings of the 5th EuroSOI Workshop 2009, p. 2 pages. https://hdl.handle.net/2078.5/252472