Ultra Scaled MultiGate SOI MOSFETs: Accumulation-Mode vs. Inversion-Mode

Afzalian, Aryan;Lederer, Dimitri;Lee, Chi-Woo;Yan, Ran;Colinge, Jean-Pierre
(2008) 4th EuroSOI Workshop 2008 — Location: Cork (Ireland) (23.January.2008)

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Authors
  • Afzalian, AryanUCLouvain
    Author
  • Lederer, DimitriTyndall National Institute, University of Cork
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
Abstract
The performances of accumulation-mode and inversion mode Multigate FETs in ultra scaled devices are compared through device simulations. We show that for sub 10nm cross dimensions, device performances (subthreshold slope, threshold voltage…) depend mainly on cross section size and bias voltage and very little on channel doping.
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Afzalian, A., Lederer, D., Lee, C.-W., Yan, R., & Colinge, J.-P. (2008). Ultra Scaled MultiGate SOI MOSFETs: Accumulation-Mode vs. Inversion-Mode. Proceedings of the 4th EuroSOI Workshop 2008, p. 47-48. https://hdl.handle.net/2078.5/253057