Threshold voltage of nonuniformly doped MOS structures
(1973) Solid-State Electronics — Vol. 16, n° 3, p. 417-423 (1973)
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- Abstract
- The minimum of the HF capacitance and the threshold voltage, for nonuniformly doped MOS structures, are calculated by means of an analytical model containing an adequate definition of the condition of strong surface inversion. The results obtained for profiles piling up close to the surface are in excellent agreement with those obtained by a numerical integration of Poisson's equation.
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Citations
Doucet, G., & Van de Wiele, F. (1973). Threshold voltage of nonuniformly doped MOS structures. Solid-State Electronics, 16(3), 417-423. https://hdl.handle.net/2078.5/81777 (Original work published 1973)