Optimisation and simulation of an alternative nano-flash memory: the SASEM device

Krzeminski, A.;Dubois, Emmanuel;Tang, Xiaohui;Reckinger, Nicolas;Bayot, Vincent;et.al.
(2004) MRS Fall Meeting 2004 — Location: Boston (USA) (28.November.2004)

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Authors
  • Krzeminski, A.IEMN, France
    Author
  • Dubois, EmmanuelIEMN, France
    Author
  • Tang, XiaohuiUCLouvain
    Author
  • Reckinger, NicolasUCLouvain
    Author
  • Crahay, AndréUCLouvain
    Author
  • Bayot, VincentUCLouvain
    Author
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Abstract
Process simulations are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimize it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.
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Krzeminski, A., Dubois, E., Tang, X., Reckinger, N., Crahay, A., & Bayot, V. (2004). Optimisation and simulation of an alternative nano-flash memory: the SASEM device. Proceedings of the MRS Fall Meeting 2004, p. 6. https://hdl.handle.net/2078.5/221674