Numerical simulation of high-speed p-i-n photodiodes under large illumination power
(2002) Acta Technica Belgica. Revue H F: Electricite Courants Faibles. Electronique Telecommunications — n° 2, p. 68-70 (2002)
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- Abstract
- We investigate the non-linear saturation behavior of a top illuminated double heterostructure p-i-n photodetector under high optical power A two-dimensional drift-diffusion model has been used to determine the influence of the space charge screening effect on the detector bandwidth. The results show that, when increasing the light optical power, the electric field within the intrinsic region begins to decrease. Consequently, the carrier velocity falls while the electron and hole density increases. This phenomenon is cumulative and determines a bandwidth reduction.
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Torrese, G., Huynen, I., Raskin, J.-P., & Vander Vorst, A. (2002). Numerical simulation of high-speed p-i-n photodiodes under large illumination power. Acta Technica Belgica. Revue H F: Electricite Courants Faibles. Electronique Telecommunications, 2, 68-70. https://hdl.handle.net/2078.5/210233 (Original work published 2002)