High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications
(2022) Solid-State Electronics — Vol. 194, p. 108301 (2022)
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Moulin, M., Rack, M., Fache, T., Chalupa, Z., Plantier, C., Morand, Y., Lacord, J., Allibert, F., Gaillard, F., Lugo, J., Hutin, L., & Raskin, J.-P. (2022). High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications. Solid-State Electronics, 194, 108301. https://doi.org/10.1016/j.sse.2022.108301 (Original work published 2022)